| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,450 pcs
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7450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The IR2130STRPBF from Infineon Technologies is a high-voltage, high-speed power MOSFET and IGBT driver. It provides three independent high and low side referenced output channels, designed for bootstrap operation and fully operational up to 600V.
Key electrical specifications include a gate drive supply range of 10 to 20V, logic compatibility down to 2.5V, and an output current capability of 200mA/420mA. The device offers matched propagation delays for high-frequency applications and includes features like undervoltage lockout and over-current shutdown for protection.
This driver IC is housed in a 28-SOIC package with a surface mount type, making it suitable for various power electronics applications. The operating temperature range is -40°C to 150°C (TJ).
It is designed for applications requiring robust and efficient control of three-phase power bridges, such as motor control and power conversion systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum high-side voltage (VOFFSET) for the IR2130STRPBF is 600V.
The operating temperature range (TJ) for the IR2130STRPBF is -40°C to 150°C.
The IR2130STRPBF is supplied in a 28-SOIC package.
The gate drive supply voltage range is 10V to 20V.
The IR2130STRPBF can drive IGBT and N-Channel MOSFET transistors.
Yes, the IR2130STRPBF features an over-current shutdown function that turns off all six drivers.