| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR2130 is a high voltage, high speed power MOSFET and IGBT driver. It features three independent high and low side referenced output channels, capable of operating up to 600 volts.
Key electrical specifications include a gate drive supply range of 10 to 20V, logic voltage compatibility down to 2.5V, and matched propagation delays for high frequency use. The device offers an over-current shutdown feature and an undervoltage lockout for all channels. It supports 3-phase bridge configurations and is suitable for driving N-channel power MOSFETs or IGBTs.
Packaged in a 28-lead PDIP with Through Hole mounting, the IR2130 is designed for robust performance in demanding applications. Its operating temperature range is -40°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum high side voltage for the IR2130 is 600V.
The IR2130 operates within a temperature range of -40°C to 150°C.
The gate drive supply voltage for the IR2130 ranges from 10V to 20V.
The IR2130 has 6 drivers.
The IR2130 has a 3-Phase channel type.
The IR2130 has a Half-Bridge driven configuration.
The IR2130 is available in a 28-DIP (0.600", 15.24mm) package.