| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
| On Request | On Request | 18 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR21271SPBF is a versatile high voltage, high-speed power MOSFET and IGBT driver. It is designed for both high-side and low-side configurations, operating up to 600V.
Key electrical specifications include a gate drive voltage range of 9V to 20V and input logic compatibility down to 3.3V. The driver features a non-inverting input and supports IGBT and N-Channel MOSFET gate types. It provides a high-side voltage of 600V and includes current drive capabilities of 250mA to 500mA, with rise times as fast as 40ns.
This device is housed in an 8-SOIC surface-mount package, making it suitable for various PCB designs. The operating temperature range is -40°C to 150°C (TJ), ensuring reliability in demanding environments. The IR21271SPBF is designed for applications such as motor drives and automotive systems requiring robust gate driving capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive voltage range is 9V to 20V.
The package is 8-SOIC (0.154", 3.90mm Width) surface mount.
The operating temperature range is -40°C to 150°C (junction temperature).
The high-side voltage is 600V.
The typical rise time is 40ns, with a maximum of 80ns.