| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 2033-02-16 21:44:00 | On Request | On Request |
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The Infineon Technologies IR2113PBF is a high voltage, high speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, enabling flexible design configurations.
Key electrical specifications include a high side voltage rating of 600V, output current capability of 2A per channel, and a wide operating voltage range from 3.3V to 20V for logic and 10V to 20V for gate drive supply. The device supports a logic voltage of 6V or 9.5V and features matched propagation delays.
Designed for robust performance, the IR2113PBF operates across a temperature range of -40°C to 150°C (TJ). It is housed in a 14-DIP package and supports through-hole mounting.
This gate driver is suitable for applications requiring efficient control of power switching devices, leveraging its high voltage tolerance and fast switching characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.12 | $4.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
2A sink and 2A source.
-40°C to 150°C (junction temperature).
14-DIP (0.300", 7.62mm) through-hole.
120ns typical turn-on, 94ns typical turn-off, with 20ns maximum delay matching.
Gate drive supply 10V to 20V, logic supply 3.3V to 20V.
Yes, separate logic supply range 3.3V to 20V.