| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Current | |
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| Halogen Free | |
| High Side Voltage | |
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| Tape & Reel | |
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The IR2113 from Infineon Technologies is a versatile high voltage, high speed power MOSFET and IGBT driver. It features independent high and low side referenced output channels, enabling robust operation in demanding applications. The device is designed for bootstrap operation and is fully operational to 600V.
Key electrical specifications include a gate drive supply range of 10 to 20V and logic compatibility down to 3.3V. It offers independent channels with 2A source and sink current capabilities. The IR2113 boasts matched propagation delays, simplifying use in high frequency circuits, with a delay matching of 20ns maximum for the IR2113 variant.
Packaged in a standard 14-DIP through-hole configuration, the IR2113 operates across a wide temperature range of -40°C to 150°C (TJ). Its design incorporates undervoltage lockout for both channels and CMOS Schmitt-triggered inputs with pull-down, ensuring reliable performance.
This gate driver is suitable for applications requiring efficient control of power transistors, such as in power supplies, motor drives, and industrial automation systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
10V to 20V.
3.3V to 20V.
2A.
IGBT and N-Channel MOSFET.
-40°C to 150°C junction temperature.
14-DIP (0.300", 7.62mm) through-hole package.