IR2112S

The IR2112S from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver designed for robust performance in demanding applications. This integrated circuit features independent high and low side referenced output channels, enabling flexible control of power devices.

Key electrical specifications include a high side voltage capability of up to 600V, a gate drive supply range of 10V to 20V, and a logic supply range from 3.3V to 20V. The device can deliver output currents of 200mA and 500mA, with output voltages ranging from 10V to 20V. It offers matched propagation delays for both channels, with typical turn-on times of 125ns and turn-off times of 105ns, and a delay matching of 30ns.

Constructed using proprietary HVIC and latch immune CMOS technologies, the IR2112S ensures reliable operation. Logic inputs are compatible with standard CMOS or LSTTL outputs down to 3.3V. The output drivers are designed with a high pulse current buffer stage to minimize driver cross-conduction, making it suitable for high frequency applications.

This device is available in a 16-SOIC package with a surface mount type. The operating temperature range is -40°C to 150°C (TJ). Its design facilitates driving N-channel power MOSFETs or IGBTs in the high-side configuration.