| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2112 from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It features independent high and low side referenced output channels, designed for bootstrap operation and fully operational to 600V. The device is tolerant to negative transient voltage and is dV/dt immune.
Key electrical specifications include a gate drive supply range of 10 to 20V and a separate logic supply range from 3.3V to 20V. The output drivers provide a peak current of 200 mA sink and 420 mA source. Matched propagation delays of 30 ns simplify use in high frequency applications, with typical turn-on and turn-off times of 125 ns and 105 ns, respectively.
This driver IC is suitable for driving N-channel power MOSFETs or IGBTs in high-side configurations. It operates within an ambient temperature range of -40°C to 125°C. The IR2112 is available in 14-Lead PDIP and 16-Lead SOIC (wide body) packages, supporting through-hole mounting.
Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IR2112 is fully operational to 600V.
The gate drive supply range is 10 to 20V.
The separate logic supply range is 3.3V to 20V.
The typical turn-on delay is 125ns and turn-off delay is 105ns.
The operating ambient temperature range is -40°C to 125°C.
The IR2112 is available in 14-Lead PDIP and 16-Lead SOIC (wide body) packages.