| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2111PBF from Infineon Technologies is a high-voltage, high-speed power MOSFET and IGBT driver. It is specifically designed for half-bridge applications, featuring dependent high and low side referenced output channels.
This gate driver IC operates with a high-side voltage capability of up to 600V and requires a gate drive supply range of 10V to 20V. It provides two driver channels with output currents of 250mA and 500mA. The device includes undervoltage lockout for both channels and internally set deadtime to prevent shoot-through.
Packaged in an 8-lead DIP, the IR2111PBF is suitable for through-hole mounting. It operates across a wide temperature range of -40°C to 150°C (TJ), making it robust for various environmental conditions. The logic inputs are compatible with standard CMOS outputs, and the driver features a high pulse current buffer stage.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.42 | $3.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V.
The operating temperature range is -40°C to 150°C.
The IR2111PBF is available in an 8-DIP (0.300", 7.62mm) through-hole package.
The high side floating supply offset voltage is 600V maximum.
The output current is 250mA minimum and 500mA maximum.
It can drive IGBTs and N-channel MOSFETs.
The typical rise time is 40ns minimum and 80ns maximum.