| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, enabling robust monolithic construction through proprietary HVIC and latch immune CMOS technologies.
Key electrical specifications include a 500V high side voltage capability, ±2A output current, and a wide operating voltage range of 3.3V to 20V. The device supports 3.3V logic compatibility and features matched propagation delays of up to 10ns, making it suitable for high-frequency applications. The gate drive supply range is from 10V to 20V.
Packaged in a 16-SOIC (0.295", 7.50mm Width) surface mount package, the IR2110STRPBF operates within a temperature range of -40°C to 150°C (TJ). Its design facilitates driving N-channel power MOSFETs or IGBTs in high-side configurations.
This driver is designed for applications requiring efficient and reliable control of power switching devices, offering features like undervoltage lockout for both channels and Schmitt-triggered inputs for improved noise immunity.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum high-side voltage is 500V.
The output current is ±2A.
The operating junction temperature range is -40°C to 150°C.
The IR2110STRPBF is available in a 16-SOIC surface-mount package.
The gate drive supply voltage range is 10V to 20V.
The matched propagation delay is 10ns maximum.