| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Type | |
| High Side Voltage | |
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The Infineon Technologies IR2110SPBF is a high voltage, high speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, enabling flexible configuration for various power applications. The device operates with a gate drive supply range of 10V to 20V and a logic supply range of 3.3V to 20V. It supports a high side voltage of up to 500V.
Key electrical characteristics include an output current capability of ±2A for both channels and matched propagation delays for precise timing in high-frequency circuits. The IR2110SPBF is designed for robust performance with features like undervoltage lockout for both channels and CMOS Schmitt-triggered inputs.
This gate driver IC is housed in a 16-SOIC package, suitable for surface mounting. Its operating temperature range is -40°C to 150°C (TJ), making it appropriate for demanding environments. The independent channel design and high voltage capability make it ideal for half-bridge configurations in power supply and motor control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.07 | $6.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10V to 20V.
500V.
±2A peak.
-40°C to 150°C.
16-SOIC (0.295", 7.50mm Width).
120ns turn-on, 94ns turn-off typical.
10ns maximum.