| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
135 pcs
|
135 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The IR2110S from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, enabling flexible design configurations. This device operates with a gate drive supply range of 10 to 20V and supports logic inputs compatible with 3.3V logic. The output drivers are designed with a high pulse current buffer stage to minimize driver cross-conduction.
Key electrical specifications include a high side voltage capability of up to 500V, independent channel current ratings of 2A, and a logic voltage range from 3.3V to 20V. Propagation delays are matched for high-frequency applications, with a typical delay matching of 10 ns max. The device operates within a temperature range of -40°C to 150°C (TJ).
Packaged in a 16-SOIC (0.295", 7.50mm Width) surface mount configuration, the IR2110S is suitable for various power management applications. Its design facilitates driving N-channel power MOSFETs or IGBTs in high-side configurations, providing robust performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply range is 10V to 20V.
The separate logic supply range is 3.3V to 20V.
The high-side voltage rating is 500V.
The operating junction temperature range is -40°C to 150°C.
The maximum propagation delay is 10ns.
The IR2110S is available in a 16-SOIC (0.295", 7.50mm width) surface-mount package.