| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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The IR2109STRPBF from Infineon Technologies is a high-voltage, high-speed power MOSFET and IGBT driver designed for half-bridge applications. It features two output channels with a high side floating channel operational up to 600V.
Key electrical specifications include a gate drive supply range of 10 to 20V and output currents of 200mA and 350mA. The device supports IGBT and N-Channel MOSFET gate types and operates with a non-inverting input. It offers an internal dead-time of 540ns, which is programmable for the IR21094 variant.
This gate driver is housed in an 8-SOIC surface mount package, measuring 3.90mm in width. It is designed for operation across a wide temperature range of -40°C to 150°C (TJ).
The IR2109STRPBF is suitable for various power switching applications where efficient driving of power transistors is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The high side voltage rating is 600V.
The gate drive supply voltage range is 10V to 20V.
The IR2109STRPBF is in an 8-SOIC package.
The operating temperature range is -40°C to 150°C (TJ).
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.