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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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The IR2109SPBF from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver designed for half-bridge applications. It operates with a gate drive supply range of 10V to 20V and can handle a high side voltage of up to 600V. This driver IC is compatible with standard CMOS or LSTTL logic inputs down to 3.3V.
Key electrical characteristics include output currents of 200mA and 350mA, and rise times of 50ns to 150ns. It also features a typical dead time of 540ns. The device is housed in an 8-SOIC surface mount package, measuring 0.154 inches or 3.90mm in width.
This driver is suitable for applications requiring efficient switching of power transistors. Its design incorporates features for preventing cross-conduction and offers tolerance to negative transient voltages, making it a robust choice for power electronics designs.
| Qty | Low | High |
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| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IR2109SPBF operates over a junction temperature range of -40°C to 150°C.
The IR2109SPBF is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The gate drive supply voltage range is 10V to 20V.
The output current is 200mA minimum and 350mA maximum.
The high-side voltage rating is 600V.