| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The IR2109S from Infineon Technologies is a high-voltage, high-speed power MOSFET and IGBT driver designed for half-bridge applications. It operates with a gate drive supply range of 10 to 20V and can handle a high side voltage of up to 600V.
This device features independent high and low side referenced output channels, with proprietary HVIC and latch immune CMOS technologies for rugged monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs down to 3.3V logic. The output drivers are designed for minimum driver cross-conduction.
The IR2109S is available in an 8-SOIC package and is designed for surface mounting. It offers features such as undervoltage lockout for both channels, cross-conduction prevention logic, and matched propagation delays. The typical dead time is 540ns, with programmability up to 5us for the IR21094 variant.
Key electrical specifications include a logic voltage range of 0.8V to 2.9V, a current capability of 200mA to 350mA, and rise times of 50ns to 150ns. The operating temperature range is -40°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10V to 20V.
8-SOIC surface mount package.
-40°C to 150°C junction temperature.
Two drivers for half-bridge operation.
600V (625V absolute maximum).
200mA to 350mA sink/source.
540ns typical, programmable up to 5µs on IR21094 variant.