| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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| Manufacturer Name | |
| Channel Type | |
| Current | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Input Type | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Rise | |
| Supplier Device Package | |
| Supplier Package | |
| Voltage |
The Infineon Technologies IR2109PBF is a high-voltage, high-speed power MOSFET and IGBT driver designed for half-bridge applications. It features a floating channel capable of operating up to 600V, making it suitable for high-side configurations.
This gate driver IC supports a gate drive supply range of 10V to 20V and is compatible with 3.3V, 5V, and 15V logic inputs. It offers a high-side output in phase with the IN input and includes cross-conduction prevention logic. The device provides matched propagation delays for both channels and has an output current capability of 200mA sourcing and 350mA sinking.
The IR2109PBF is housed in an 8-DIP (0.300", 7.62mm) through-hole package. It operates within a junction temperature range of -40°C to 150°C. The part is suitable for applications requiring robust driving of power transistors in a half-bridge topology.
Key electrical characteristics include a 600V high-side voltage, 10-20V operating voltage, and 200mA/350mA output current. It also features non-inverting input and synchronous channel types, with rise times of 50ns and 150ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.42 | $3.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10V to 20V.
8-DIP (8-PDIP) through-hole package.
-40°C to 150°C junction temperature.
600V.
Typical 200mA, maximum 350mA.
Half-bridge.
IGBT and N-Channel MOSFET.