| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
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2,400 pcs
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2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2108STRPBF from Infineon Technologies is a versatile half-bridge gate driver IC designed for high-voltage applications. It operates up to 600V and supports a gate drive supply range of 10V to 20V. The device features independent channels, making it suitable for driving N-channel MOSFETs and IGBTs in half-bridge configurations.
Key electrical characteristics include a nominal high side voltage of 600V, a gate drive supply range of 10V to 20V, and input logic compatibility down to 3.3V. It offers independent channels with non-inverting input types and supports IGBT and N-Channel MOSFET gate types. The IC provides a nominal current rating of 200mA and 350mA, with rise times of 50ns and 150ns.
Packaged in an 8-SOIC surface-mount form factor, the IR2108STRPBF is designed for efficient integration into power electronic circuits. It operates within a junction temperature range of -40°C to 150°C, ensuring reliability in demanding environments. The device includes features like undervoltage lockout and cross-conduction prevention logic for robust operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V. The high-side voltage rating is 600V.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The junction temperature range is -40°C to 150°C.
The peak output current is 200mA and 350mA.
Yes, the internal dead-time is 540ns.
It has two independent driver channels configured as a half-bridge.
It can drive IGBTs and N-Channel MOSFETs.