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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2108S from Infineon Technologies is a versatile half-bridge gate driver IC designed for high-speed power switching applications. It operates up to 600V on the high-side channel, making it suitable for demanding power conversion tasks. The device features two independent output channels, each capable of driving N-channel MOSFETs or IGBTs.
Key electrical characteristics include a gate drive supply range of 10V to 20V and logic compatibility down to 3.3V. The IR2108S offers a 540ns internal dead-time, crucial for preventing shoot-through in half-bridge configurations. It also provides undervoltage lockout for both channels, ensuring safe operation.
Packaged in an 8-SOIC surface-mount package, the IR2108S is designed for ease of integration into power electronic circuits. Its robust construction and reliable performance make it a suitable choice for various industrial and consumer applications requiring efficient power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The high side voltage is up to 600V, gate drive supply voltage is 10V to 20V, and logic voltage thresholds are 0.8V and 2.9V.
The IR2108S is available in an 8-SOIC surface mount package (8-SOIC, 0.154", 3.90mm Width).
The operating temperature range is -40°C to 150°C (junction temperature).
The output current range is 200mA to 350mA.
Yes, it has an internal dead-time of 540ns.
It can drive N-channel MOSFETs and IGBTs.