| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,645 pcs
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2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,650 pcs
|
1650 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR2106STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It features independent high and low side referenced output channels, capable of operating up to 600V. The device is designed for bootstrap operation and is tolerant to negative transient voltage with dV/dt immunity.
This gate driver IC supports a gate drive supply range of 10V to 20V and is compatible with 3.3V, 5V, and 15V logic inputs. It includes undervoltage lockout for both channels and offers matched propagation delays. The output drivers are designed with a high pulse current buffer stage to minimize driver cross-conduction.
The IR2106STRPBF is housed in an 8-SOIC package, suitable for surface mount applications. Its operating temperature range is -40°C to 150°C (TJ), making it suitable for demanding environments. The part number is IR2106STRPBF and it is manufactured by Infineon Technologies.
Key electrical specifications include a high side voltage of 600V, logic voltage compatibility down to 0.8V, and output currents of 200mA and 350mA. Rise times are specified as 50ns to 150ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.54 | $1.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V.
The maximum high-side voltage is 600V.
The output current is between 200 mA and 350 mA.
The operating junction temperature range is -40°C to 150°C.
The device is available in an 8-SOIC surface-mount package.
It has two independent driver channels.
It supports IGBT and N-Channel MOSFET gates.