| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
2,850 pcs
|
2850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Current | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Input Type | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Rise | |
| Supplier Device Package | |
| Voltage |
The Infineon Technologies IR2106SPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It features independent high and low side referenced output channels, enabling bootstrap operation and full functionality up to 600V. The device is tolerant to negative transient voltage and immune to dV/dt.
Designed for half-bridge configurations, the IR2106SPBF supports a gate drive supply range of 10V to 20V. It is compatible with standard CMOS or LSTTL logic down to 3.3V. The output drivers include a high pulse current buffer stage for minimal driver cross-conduction. The logic input is non-inverting, and the channel type is independent.
This gate driver IC is housed in an 8-SOIC surface mount package. It operates within a temperature range of -40°C to 150°C (TJ). Key electrical specifications include a high side voltage of 600V, a gate drive supply of 10V to 20V, and output currents of 200mA and 350mA. Propagation delay is specified between 50ns and 150ns.
The IR2106SPBF is suitable for applications requiring efficient driving of power MOSFETs or IGBTs in high-side configurations. Its robust design and features make it a reliable choice for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10V to 20V.
600V.
-40°C to 150°C junction temperature.
8-SOIC surface mount package.
200mA sink and 350mA source.
50ns to 150ns.
N-channel MOSFETs and IGBTs.