| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,358 pcs
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6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Current | |
| Driven Configuration | |
| Gate Type | |
| Halogen Free | |
| High Side Voltage | |
| Input Type | |
| Junction Temperature | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Propagation Delay | |
| Rise | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Voltage |
The Infineon Technologies IR2106S is a high voltage, high speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, capable of operating up to 600V. The device features a gate drive supply range from 10V to 20V and is compatible with 3.3V, 5V, and 15V logic inputs.
Key electrical characteristics include a high side voltage rating of 600V, logic voltage compatibility down to 3.3V, and matched propagation delays for both channels. The output drivers are designed for minimum cross-conduction, and the floating channel can drive an N-channel power MOSFET or IGBT in a high-side configuration.
This gate driver IC is housed in an 8-SOIC package and is suitable for surface mount applications. It operates within a temperature range of -40°C to 150°C (TJ), making it robust for various industrial environments. The IR2106S is designed for applications requiring efficient and reliable control of power switching devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10V to 20V.
600V maximum.
200mA sink, 350mA source.
3.3V, 5V, and 15V.
Matched for both channels.
8-SOIC (0.154", 3.90mm Width) surface mount.
-40°C to 150°C (junction temperature).