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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR21064S is a high voltage, high speed power MOSFET and IGBT driver. It provides independent high-side and low-side referenced output channels, operating up to 600V.
This gate driver is designed for bootstrap operation and is tolerant to negative transient voltage with dV/dt immunity. It supports a gate drive supply range of 10V to 20V and features undervoltage lockout for both channels. The logic input is compatible with standard CMOS or LSTTL output down to 3.3V logic.
The IR21064S is housed in a 14-SOIC package and is suitable for surface mount applications. Its output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Key electrical specifications include a high side voltage of 600V, a gate drive supply of 10V to 20V, and output currents of 200mA and 350mA.
With two independent channels, this device is ideal for driving N-channel power MOSFETs or IGBTs in high-side configurations. Its robust monolithic construction, enabled by proprietary HVIC and latch immune CMOS technologies, ensures reliable performance in demanding applications.
| Qty | Low | High |
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| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V.
The maximum high-side voltage is 600V.
The operating junction temperature range is -40°C to 150°C.
The package is 14-SOIC (surface mount).
The output current is 200mA sink and 350mA source.
It can drive IGBT and N-Channel MOSFET gates.
The rise time is 50ns to 150ns.