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6,358 pcs
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6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2105S from Infineon Technologies is a high-voltage, high-speed power MOSFET and IGBT driver. It is designed for half-bridge applications and features a floating channel capable of operating up to 600V.
Key electrical specifications include a gate drive supply range of 10V to 20V and a high side voltage rating of 600V. The device offers a peak output current of 210mA sourcing and 360mA sinking, with rise and fall times of 100ns and 50ns respectively. The operating temperature range is -40°C to 150°C (TJ).
This gate driver is suitable for applications requiring efficient switching of power transistors. Its robust design and integrated features make it a reliable choice for power management circuits. The component is housed in an 8-SOIC surface mount package.
Designed for ease of use, the IR2105S integrates cross-conduction prevention logic and internally set deadtime. The logic input is compatible with standard CMOS or LSTTL outputs, simplifying integration into existing designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V.
The high side voltage rating is 600V.
The operating temperature range is -40°C to 150°C (TJ).
The IR2105S is available in an 8-SOIC package.
It is designed to drive IGBT and N-Channel MOSFET gates.
The peak output current is 210mA sourcing and 360mA sinking.