| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,718 pcs
|
1718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The IR2104S from Infineon Technologies is a high voltage, high-speed power MOSFET and IGBT driver. It is designed for half-bridge applications and features a floating channel capable of operating up to 600V. This device is built using proprietary HVIC and latch immune CMOS technologies for rugged monolithic construction.
Key electrical specifications include a gate drive supply range of 10 to 20V and an output current capability of up to 270mA. The device supports 3.3V, 5V, and 15V input logic compatibility. It also includes features like undervoltage lockout, cross-conduction prevention logic, and internally set deadtime.
The IR2104S is housed in an 8-SOIC package, suitable for surface mount applications. Its operating temperature range is -40°C to 150°C (TJ). The device is described as RoHS3 Compliant and has an MSL of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage (VB) and low side/logic supply (VCC) both range from 10V to 20V.
The output current is 130mA minimum and 270mA maximum.
The typical deadtime is 520ns.
The junction temperature range is -40°C to 150°C.
The IR2104S is available in an 8-SOIC surface mount package.
It can drive IGBTs and N-channel MOSFETs.
The high side voltage rating is 600V.