IR2102S The Infineon Technologies IR2102S is a high voltage, high speed gate driver IC designed for half-bridge applications. It supports IGBT and N-Channel MOSFETs with a 600V high side voltage capability.
Mfr Part #:

IR2102S

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IR2102S is a high voltage, high speed gate driver IC designed for half-bridge applications. It supports IGBT and N-Channel MOSFETs with a 600V high side voltage capability.
✓ Total Stock: 7,708 pcs
$ Price Range: $2.01

IR2102S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,512 pcs
4512 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,196 pcs
3196 pcs On Request 1 On Request On Request On Request On Request On Request

IR2102S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Current
Driven Configuration
Gate Type
Halogen Free
High Side Voltage
Input Type
Junction Temperature
Logic Voltage
Mounting Type
Number of Drivers
Operating Temperature
Rise
Storage Temperature
Supplier Device Package
Voltage

IR2102S Description

Short technical summary and product information.

The IR2102S from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It features independent high and low side referenced output channels, designed for bootstrap operation and fully operational to 600V.

 

Key electrical specifications include a gate drive supply range of 10 to 20V, with logic input compatibility for 3.3V, 5V, and 15V. The device offers matched propagation delays and is tolerant to negative transient voltage with dV/dt immunity.

 

This driver is suitable for driving N-channel power MOSFETs or IGBTs in a high-side configuration. It comes in an 8-SOIC package suitable for surface mounting.

 

The IR2102S is designed with proprietary HVIC and latch immune CMOS technologies, enabling ruggedized monolithic construction. Its output drivers feature a high pulse current buffer stage for minimum driver cross-conduction.

IR2102S Quick Information

Product Type: Gate Driver IC
Canonical Name: IR2102S High and Low Side Driver
Subcategory: High and Low Side Driver

IR2102S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 2
REACH Status: REACH Unaffected
Lead Free: Yes

IR2102S Estimated Pricing

Qty Low High
1+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

IR2102S Features

  • High voltage, high speed gate driver.
  • Fully operational to 600V.
  • 10V to 20V gate drive supply range.
  • Supports IGBT and N-Channel MOSFETs.
  • Surface mount 8-SOIC package.

IR2102S Applications

  • Ideal for half-bridge circuits.
  • Drives N-channel MOSFETs.
  • Drives IGBT devices.
  • High-side power switching.

IR2102S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the IR2102S?

The IR2102S operates with a supply voltage range of 10 to 20 V for both the high-side floating supply and the low-side logic supply.

What is the package type of the IR2102S?

The IR2102S is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range of the IR2102S?

The IR2102S operates over a junction temperature range of -40°C to 150°C.

What is the high-side voltage rating of the IR2102S?

The IR2102S has a high-side floating supply offset voltage rating of 600 V.

What is the propagation delay of the IR2102S?

The typical propagation delay is 160 ns for turn-on and 150 ns for turn-off, with a delay matching of 50 ns.

What logic levels are compatible with the IR2102S?

The IR2102S has logic input compatibility with 3.3V, 5V, and 15V signals.

What is the output current capability of the IR2102S?

The IR2102S can source 270 mA and sink 130 mA for both high-side and low-side outputs.

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