| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,512 pcs
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4512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,196 pcs
|
3196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2102S from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It features independent high and low side referenced output channels, designed for bootstrap operation and fully operational to 600V.
Key electrical specifications include a gate drive supply range of 10 to 20V, with logic input compatibility for 3.3V, 5V, and 15V. The device offers matched propagation delays and is tolerant to negative transient voltage with dV/dt immunity.
This driver is suitable for driving N-channel power MOSFETs or IGBTs in a high-side configuration. It comes in an 8-SOIC package suitable for surface mounting.
The IR2102S is designed with proprietary HVIC and latch immune CMOS technologies, enabling ruggedized monolithic construction. Its output drivers feature a high pulse current buffer stage for minimum driver cross-conduction.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IR2102S operates with a supply voltage range of 10 to 20 V for both the high-side floating supply and the low-side logic supply.
The IR2102S is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The IR2102S operates over a junction temperature range of -40°C to 150°C.
The IR2102S has a high-side floating supply offset voltage rating of 600 V.
The typical propagation delay is 160 ns for turn-on and 150 ns for turn-off, with a delay matching of 50 ns.
The IR2102S has logic input compatibility with 3.3V, 5V, and 15V signals.
The IR2102S can source 270 mA and sink 130 mA for both high-side and low-side outputs.