| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,500 pcs
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7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR2101STR is an integrated circuit designed as a half-bridge gate driver. It is suitable for driving IGBT and N-Channel MOSFETs, featuring a high side voltage capability of up to 600V.
This device operates within a supply voltage range of 10V to 20V and supports logic voltages of 0.8V and 3V. It provides two independent drivers with current capabilities of 210mA and 360mA. The rise and fall times are specified as 100ns and 50ns, respectively.
The IR2101STR is packaged in an 8-SOIC form factor with a surface mount type, making it suitable for various PCB designs. It operates across a wide temperature range from -40°C to 150°C (TJ).
This gate driver is RoHS 3 compliant, has an MSL rating of 1, and is REACH unaffected. Its non-inverting input type and half-bridge configuration make it a versatile component for power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IR2101STR operates with a supply voltage between 10V and 20V.
The operating temperature range is -40°C to 150°C (junction temperature).
The IR2101STR is available in an 8-SOIC surface-mount package.
The high-side voltage rating is 600V.
The IR2101STR can drive IGBTs and N-channel MOSFETs.
The output current range is 210mA to 360mA.
The IR2101STR is configured as a half-bridge driver.