| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,147 pcs
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3147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR2101S is a versatile high voltage, high speed power MOSFET and IGBT driver. It features independent high and low side referenced output channels, making it suitable for half-bridge configurations.
This device is fully operational to 600V and offers a gate drive supply range of 10 to 20V. It is tolerant to negative transient voltage and dV/dt immune. The logic input is compatible with 3.3V, 5V, and 15V logic levels. The output drivers are designed with a high pulse current buffer stage for minimal driver cross-conduction.
The IR2101S is available in an 8-SOIC package, suitable for surface mount applications. Its operating temperature range is -40°C to 150°C (TJ). Key electrical specifications include a maximum high side voltage of 600V, output currents up to 270mA, and matched propagation delays.
This gate driver is ideal for applications requiring efficient switching of power transistors in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IR2101S has a maximum high-side floating supply voltage of 625V and a high-side offset voltage rating of 600V.
The gate drive supply range is 10V to 20V.
The operating junction temperature range is -40°C to 150°C.
The IR2101S is available in an 8-SOIC surface-mount package with a 3.90mm body width.
Typical turn-on propagation delay is 160ns and turn-off is 150ns, with a delay matching of 50ns.