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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | *+ | On Request | On Request |
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The IR2010PBF from Infineon Technologies is a high-speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, designed for bootstrap operation and fully operational up to 200V.
This gate driver features a gate drive supply range of 10 to 20V and a separate logic supply range of 3.3V to 20V. It is compatible with 3.3V logic and includes undervoltage lockout for both channels. The device provides 3A of output current for both high and low sides, with matched propagation delays of 15ns maximum.
Packaged in a 14-DIP (0.300", 7.62mm) through-hole package, the IR2010PBF is suitable for applications such as converters and DC motor drives. Its design includes cross-conduction prevention logic and a shutdown input to turn off both channels.
Key electrical characteristics include a 200V maximum high side voltage, 3A typical output current, and a wide operating temperature range of -40°C to 150°C (TJ). The device supports IGBT and N-Channel MOSFET gate types.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum high side voltage is 200V.
The junction temperature range is -40°C to 150°C.
The IR2010PBF is available in a 14-DIP (0.300", 7.62mm) through-hole package.
The typical output current is 3A for both sink and source.
Typical propagation delays are 95ns rise and 65ns fall.
The gate drive supply voltage range is 10V to 20V.