IQE006NE2LM5CGATMA1 Infineon IQE006NE2LM5CG N-Channel MOSFET. Features 25V maximum drain-source voltage, 41A continuous drain current at ambient temperature (298A at case), and ultra-low 0.65mOhm on-resistance.
Mfr Part #:

IQE006NE2LM5CGATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IQE006NE2LM5CG N-Channel MOSFET. Features 25V maximum drain-source voltage, 41A continuous drain current at ambient temperature (298A at case), and ultra-low 0.65mOhm on-resistance.
✓ Total Stock: 46,020 pcs
$ Price Range: $1.00 - $3.43

IQE006NE2LM5CGATMA1 Available from 1 distributor

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✓ Non-Authorised
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IQE006NE2LM5CGATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IQE006NE2LM5CGATMA1 Description

Short technical summary and product information.

The IQE006NE2LM5CG from Infineon Technologies is an N-channel MOSFET built on OptiMOS 5 technology, designed for high-efficiency power switching applications. With a maximum drain-source voltage of 25 V and continuous drain current ratings of 41 A at ambient temperature and up to 298 A at case temperature, this device delivers high current capability in a compact form factor.

 

Key electrical characteristics include an ultra-low on-resistance of 0.65 mOhm (typical at 10V gate drive), which minimizes conduction losses. The logic-level gate threshold of 2V allows direct drive from low-voltage controllers. The device features a gate charge of 82.1 nC and input capacitance of 5453 pF, enabling fast switching transitions. It is 100% avalanche tested with a single-pulse avalanche energy rating of 140 mJ.

 

Packaged in the PG-TTFN-9-1 surface-mount package with nine leads, the MOSFET provides excellent thermal performance with a maximum power dissipation of 89 W at case temperature. The operating junction temperature range is -55°C to 150°C.

 

Compliant with RoHS and halogen-free per IEC61249-2-21, this device is suitable for industrial applications requiring high efficiency and reliability.

IQE006NE2LM5CGATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 5
Canonical Name: Infineon Technologies IQE006NE2LM5CG N-Channel MOSFET
Subcategory: N-Channel MOSFET

IQE006NE2LM5CGATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb-free

IQE006NE2LM5CGATMA1 Estimated Pricing

Qty Low High
1+ $3.43 $3.43
10+ $2.23 $2.23
50+ $1.71 $1.71
100+ $1.54 $1.54
500+ $1.25 $1.25
5,000+ $1.00 $1.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

IQE006NE2LM5CGATMA1 Features

  • Ultra-low 0.65 mOhm on-resistance.
  • Up to 298A continuous drain current.
  • Logic-level gate threshold (2V max).
  • 100% avalanche tested for reliability.
  • RoHS compliant and halogen-free.

IQE006NE2LM5CGATMA1 Applications

  • Efficient DC-DC converter power stages.
  • Low-voltage load switch applications.
  • Battery management and protection systems.
  • High-current power distribution networks.
  • Motor drive and solenoid control circuits.

IQE006NE2LM5CGATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

25 V

What package is the IQE006NE2LM5CG available in?

PG-TTFN-9-1

What is the operating junction temperature range?

-55°C to 150°C

Is this component RoHS compliant?

Yes, RoHS compliant.

What is the continuous drain current rating?

41 A at ambient temperature, 298 A at case temperature

What is the typical on-resistance?

0.65 mOhm at Vgs=10V, Id=20A

What is the gate threshold voltage?

2 V maximum

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