| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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148 pcs
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148 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The Infineon IQD020N10NM5CG is a 100V N-channel MOSFET from the OptiMOSTM 5 series. It features a very low on-resistance of 2.05 mΩ (max) at VGS=10V and ID=50A, and a high continuous drain current rating of 273A at TC=25°C.
This MOSFET is fully qualified according to JEDEC for industrial applications. It is packaged in a PG-TTFN-9 surface mount package. The device is Pb-free and Halogen-free, complying with RoHS standards.
Key electrical parameters include a gate-source voltage range of ±20V, a maximum power dissipation of 333W at TC=25°C, and typical output capacitance (Qoss) of 125nC and gate charge (QG) of 107nC.
Its superior thermal resistance and 100% avalanche tested rating make it suitable for demanding power applications.
The maximum drain-source voltage (VDS) for the IQD020N10NM5CG is 100V.
The maximum on-resistance (RDS(on)) is 2.05 mΩ when tested at VGS=10 V and ID=50 A.
The continuous drain current (ID) is rated at 273A when the case temperature is 25°C and VGS is 10V.
The IQD020N10NM5CG is supplied in the PG-TTFN-9 package.
Yes, the IQD020N10NM5CG is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Yes, the IQD020N10NM5CG is Halogen-free.