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1,077 pcs
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1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPZA60R060P7 is a 600V CoolMOS P7 series N-channel power MOSFET. This 7th generation technology is designed for high voltage power MOSFET applications, offering a balance of performance and ease of use. It features low ringing tendency, outstanding body diode robustness against hard commutation, and excellent ESD capability.
Key electrical specifications include a maximum drain-source voltage of 650V, a maximum on-resistance of 60mΩ, and a typical gate charge of 67nC. The pulsed drain current is rated at 151A, with an energy loss (Eoss) of 7.1 µJ at 400V. The device also boasts excellent ESD robustness of over 2kV (HBM).
Designed for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages, the IPZA60R060P7 is suitable for use in PC Silverbox, adapters, LCD & PDP TVs, lighting, servers, telecom, and UPS systems. It comes in a PG-TO 247-4-3 package and is through-hole mounted.
The CoolMOS P7 platform provides significant reduction in switching and conduction losses, leading to more efficient, compact, and cooler switching applications. Its ease of use and fast design-in are facilitated by low ringing tendency and suitability across PFC and PWM stages.
The maximum drain-source voltage (VDS) at Tj,max for the IPZA60R060P7 is 650V.
The maximum on-resistance (RDS(on)) for the IPZA60R060P7 is 60 mΩ.
The typical gate charge (Qg) for the IPZA60R060P7 is 67 nC.
The IPZA60R060P7 is supplied in a PG-TO 247-4-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.