| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,477 pcs
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1477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| Halogen Free | |
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The Infineon IPZ65R045C7 is a high-voltage N-channel power MOSFET from the CoolMOS C7 series. Designed using the superjunction principle, this transistor offers superior efficiency, reduced gate charge, and outstanding reliability.
Key electrical specifications include a maximum drain-source voltage of 700V, a maximum on-state resistance of 45 mΩ, and a typical gate charge of 93 nC. It also features a pulsed drain current capability of 212A and an output capacitance energy of 11.7 µJ at 400V.
The device is built with Pb-free plating and a halogen-free mold compound, making it suitable for industrial-grade applications. It is qualified according to JEDEC standards.
The IPZ65R045C7 is supplied in a PG-TO 247-4 package, designed for through-hole mounting. Its features enable higher system efficiency, increased power density, and reduced cooling requirements, making it ideal for applications such as PFC stages and hard-switching PWM stages in computing, server, telecom, UPS, and solar systems.
The maximum drain-source voltage (VDS) at Tj,max for the IPZ65R045C7 is 700V.
The maximum on-resistance (RDS(on)) for the IPZ65R045C7 is 45 mΩ.
The typical gate charge (Qg) for the IPZ65R045C7 is 93 nC.
The IPZ65R045C7 is supplied in a PG-TO 247-4 package.
The RoHS Status for the IPZ65R045C7 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IPZ65R045C7 is 1 Unlimited.