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IPZ65R019C7 The Infineon IPZ65R019C7 is a 650V CoolMOS C7 N-channel power MOSFET. It offers low on-resistance and high efficiency for power management applications.
Mfr Part #:

IPZ65R019C7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPZ65R019C7 is a 650V CoolMOS C7 N-channel power MOSFET. It offers low on-resistance and high efficiency for power management applications.
✓ Total Stock: 1,000 pcs

IPZ65R019C7 Available from 1 distributor

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IPZ65R019C7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Mounting Type
Package / Case
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IPZ65R019C7 Description

Short technical summary and product information.

The Infineon IPZ65R019C7 is a high-voltage N-channel power MOSFET from the CoolMOS C7 series. Designed using the superjunction principle, this transistor offers enhanced efficiency, reduced gate charge, and improved reliability.

 

Key electrical specifications include a maximum Drain-Source Voltage (VDS) of 700V, a maximum On-Resistance (RDS(on)) of 19mΩ, and a typical Gate Charge (Qg) of 215nC. It also features a pulsed drain current capability of 496A and an output capacitance energy (Eoss) of 27µJ at 400V.

 

This MOSFET is suitable for applications such as Power Factor Correction (PFC) stages and hard-switching PWM stages in computing, server, telecom, UPS, and solar power systems. It is packaged in a PG-TO 247-4 through-hole configuration.

 

The CoolMOS C7 technology provides benefits like increased MOSFET dv/dt ruggedness, best-in-class FOM for efficiency, and easy drive characteristics. It is manufactured with Pb-free plating and halogen-free mold compound, qualified for industrial-grade applications.

IPZ65R019C7 Quick Information

Product Type: MOSFET
Series: CoolMOS C7
Canonical Name: Infineon IPZ65R019C7 CoolMOS C7 650V N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IPZ65R019C7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free plating

IPZ65R019C7 Features

  • 650V CoolMOS C7 N-channel power MOSFET.
  • Low 19mΩ maximum on-resistance.
  • High 700V drain-source voltage.
  • Efficient switching with 215nC gate charge.
  • PG-TO 247-4 through-hole package.

IPZ65R019C7 Applications

  • Ideal for PFC stages.
  • Suitable for hard-switching PWM.
  • Used in server power supplies.
  • Applicable in telecom systems.
  • Designed for solar inverters.

IPZ65R019C7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPZ65R019C7?

The maximum drain-source voltage (VDS) at Tj,max is 700V.

What is the maximum on-resistance of the IPZ65R019C7 MOSFET?

The maximum on-resistance (RDS(on)) is 19 mΩ.

What is the typical gate charge for the IPZ65R019C7?

The typical gate charge (Qg) is 215 nC.

What package type is the IPZ65R019C7 MOSFET supplied in?

The IPZ65R019C7 is supplied in the PG-TO 247-4 package.

Is the IPZ65R019C7 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPZ65R019C7?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

Does the IPZ65R019C7 meet REACH regulations?

The REACH status is REACH Unaffected.

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