| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Infineon IPZ60R099C7 is a 600V CoolMOS C7 series N-channel power MOSFET designed for high-voltage power applications. This device utilizes superjunction technology to achieve superior performance, including a low on-resistance of 99 mOhm and a typical gate charge of 42 nC.
Key electrical characteristics include a maximum drain-source voltage of 650V, a continuous drain current of 36A at Tj<150°C, and a pulsed drain current of 83A. The MOSFET also features increased dv/dt ruggedness up to 120V/ns, making it suitable for hard and soft switching applications like PFC and LLC stages.
Packaged in a PG-TO 247-4 configuration, this component is designed for through-hole mounting. It offers benefits such as increased efficiency due to lower switching losses and higher power density solutions. The device is Pb-free plating and halogen-free, qualified for industrial grade applications.
Applications include PFC and PWM stages for high power SMPS in computing, server, telecom, UPS, and solar systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) at Tj,max is 650V.
The maximum on-resistance (Rds(on)) is 99 mOhm.
The typical gate charge (Qg) is 42 nC.
The continuous drain current (Id,continuous) is 36A at Tj<150°C.
The MOSFET is supplied in the PG-TO 247-4 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.