| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,470 pcs
|
1470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Infineon IPZ60R017C7 is a 600V CoolMOS C7 N-channel power MOSFET designed for high-voltage power applications. This transistor utilizes Infineon's superjunction (SJ) technology to achieve high performance and efficiency.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (RDS(on)) of 17mΩ, and a typical Gate Charge (Qg) of 240nC. It supports a high continuous drain current of 129A at Tj<150°C and a pulse drain current of 495A. The device also features a MOSFET dv/dt ruggedness of 120V/ns and an energy in output capacitance (Eoss) of 30µJ at 400V.
This MOSFET is suitable for hard and soft switching applications, including PFC and high-performance LLC stages in power supplies. It is packaged in a PG-TO 247-4 through-hole configuration, designed for efficient heat dissipation and ease of use in demanding applications like computing, server, telecom, and solar power systems.
The IPZ60R017C7 is Pb-free and halogen-free, meeting industrial grade application standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
PG-TO247-4.
240nC.
129A.
495A.
120V/ns.
200A/µs.