| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
130 pcs
|
130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present |
The Infineon IPZ40N04S5L-7R4 is an OptiMOS™-5 series N-channel enhancement mode power MOSFET designed for automotive applications. It features a logic-level gate and is AEC Q101 qualified.
Key electrical characteristics include a drain-source breakdown voltage of 40V and a maximum drain-source on-state resistance as low as 7.4 mΩ at VGS=10V, ID=20A. The device operates at temperatures up to 175°C and has a continuous drain current rating of 40A at 25°C.
This MOSFET is supplied in a PG-TSDSON-8-32 package, suitable for surface mounting. It is 100% avalanche tested and meets RoHS compliance requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum gate threshold voltage is 2.0V.
The maximum drain-source on-state resistance is 7.4mΩ at VGS=10V, ID=20A.
The operating and storage temperature range is -55°C to +175°C.
This MOSFET is in a PG-TSDSON-8-32 package.
This product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.