| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,349 pcs
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4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPZ40N04S5-8R4 is an OptiMOS™-5 power MOSFET designed for automotive applications. This N-channel enhancement mode MOSFET features AEC Q101 qualification and a high operating temperature of 175°C.
Key electrical characteristics include a drain-source breakdown voltage of 40V and a maximum on-state resistance of 8.4 mΩ at VGS=10V, ID=20A. It supports a continuous drain current of up to 40A at 25°C case temperature.
The device is supplied in a PG-TSDSON-8-32 package, suitable for surface mounting. Its robust design and automotive qualification make it suitable for demanding applications within vehicles.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 2.8V.
The maximum on-state resistance is 9.9mW at VGS=7V, ID=20A, and 8.4mW at VGS=10V, ID=20A.
The maximum continuous drain current is 40A at TC=25°C and 33A at TC=100°C.
The operating temperature range is -55°C to +175°C.
This MOSFET is supplied in a PG-TSDSON-8-32 package.
Yes, this MOSFET is AEC Q101 qualified.