| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
240 pcs
|
240 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW90R1K0C3 is an N-Channel power MOSFET from Infineon Technologies, designed for high-voltage switching applications. It features a maximum drain-source voltage of 900V and a continuous drain current of 5.7A at case temperature. The device has a maximum on-resistance of 1 Ohm at 3.3A and 10V gate drive, ensuring efficient power conversion. With a gate charge of 34 nC and input capacitance of 850 pF, it offers moderate switching performance suitable for power supplies and inverters. The MOSFET is housed in a TO-247-3 through-hole package (PG-TO247-3-21), providing robust thermal performance with a maximum power dissipation of 89W. It operates over a junction temperature range of -55°C to 150°C. The part is RoHS3 compliant and has an MSL of 1 (unlimited).
900V.
5.7A at case temperature.
1 Ohm maximum at 3.3A and 10V gate drive.
-55°C to 150°C junction temperature.
TO-247-3 through-hole package (PG-TO247-3-21).
Yes, it is listed as RoHS3 compliant (unverified).
3.5V maximum at 370µA drain current.