| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,737 pcs
|
4737 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW90R120C3XKSA1 is an N-Channel power MOSFET from Infineon's CoolMOS family, rated for 900V drain-source voltage and 36A continuous drain current at 25°C case temperature (23A at 100°C). It features a maximum on-resistance of 120 mOhm at 26A, 10V, with a typical gate charge of 270 nC at 10V. The device is designed for high-efficiency power conversion in quasi-resonant flyback and forward topologies, PC silverbox supplies, and industrial SMPS applications. It offers a pulsed drain current of 96A, an avalanche energy capability of 1940 mJ, and a dv/dt ruggedness of 50 V/ns. The MOSFET is housed in a TO-247-3 through-hole package (PG-TO247-3-21) with Pb-free lead plating and is RoHS3 compliant. Thermal resistance from junction to case is 0.3 K/W, and the operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $17.12 | $17.12 |
| 30+ | $10.55 | $10.55 |
| 60+ | $9.77 | $9.77 |
| 120+ | $9.11 | $9.11 |
| 510+ | $8.49 | $8.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900 V
TO-247-3 (PG-TO247-3-21) through-hole package.
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant with Pb-free lead plating.
270 nC at Vgs=10V.
120 mOhm at Id=26A, Vgs=10V, Tj=25°C.
36 A at Tc=25°C, 23 A at Tc=100°C.