IPW65R095C7XKSA1 N-Channel MOSFET from Infineon's CoolMOS C7 series. Rated for 650V drain-source voltage and 24A continuous drain current with 95mΩ on-resistance.
Mfr Part #:

IPW65R095C7XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon's CoolMOS C7 series. Rated for 650V drain-source voltage and 24A continuous drain current with 95mΩ on-resistance.
✓ Total Stock: 20 pcs
$ Price Range: $3.19 - $7.71

IPW65R095C7XKSA1 Available from 1 distributor

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IPW65R095C7XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPW65R095C7XKSA1 Description

Short technical summary and product information.

The IPW65R095C7XKSA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the CoolMOS C7 series based on superjunction technology. It is designed for high-voltage power conversion applications requiring fast switching and high efficiency.

 

Key electrical specifications include a maximum drain-source voltage of 650V (700V at maximum junction temperature), continuous drain current of 24A at case temperature, and a typical on-resistance of 95mΩ at 10V gate drive. The device features a maximum gate charge of 45nC and input capacitance of 2140pF at 400V drain-source voltage, enabling efficient high-frequency operation.

 

The MOSFET is housed in a through-hole TO-247-3 package (supplier package PG-TO247-3-1) and is qualified for industrial grade applications per JEDEC standards. It offers Pb-free plating and halogen-free mold compound. Typical applications include PFC stages and hard switching PWM stages for computing, server, telecom, UPS, and solar systems.

IPW65R095C7XKSA1 Quick Information

Product Type: MOSFET
Series: C7
Canonical Name: Infineon Technologies IPW65R095C7XKSA1 CoolMOS C7 N-Channel MOSFET
Subcategory: Single MOSFET

IPW65R095C7XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPW65R095C7XKSA1 Estimated Pricing

Qty Low High
1+ $7.71 $7.71
30+ $4.44 $4.44
60+ $4.05 $4.05
120+ $3.72 $3.72
510+ $3.19 $3.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPW65R095C7XKSA1 Features

  • 650V drain-source voltage rating.
  • 24A continuous drain current capability.
  • 95mΩ typical on-resistance at 10V gate drive.
  • 45nC typical gate charge for fast switching.
  • Through-hole TO-247-3 package for easy mounting.

IPW65R095C7XKSA1 Applications

  • PFC stages for power factor correction.
  • Hard switching PWM stages in power supplies.
  • Server and telecom power conversion systems.
  • UPS and solar inverter applications.

IPW65R095C7XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPW65R095C7XKSA1?

The maximum drain-source voltage is 650V, and 700V at maximum junction temperature.

What is the continuous drain current rating?

The continuous drain current is 24A at case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 95mΩ at 11.8A drain current and 10V gate-source voltage.

What package does the IPW65R095C7XKSA1 come in?

It comes in a through-hole TO-247-3 package (supplier device package PG-TO247-3-1).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IPW65R095C7XKSA1 RoHS compliant?

It is listed as RoHS3 Compliant, though this is unverified.

What is the gate charge of this MOSFET?

The maximum gate charge is 45nC at 10V gate-source voltage.

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