| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | 1917 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The Infineon IPW65R095C7 is a high-voltage N-channel power MOSFET from the CoolMOS C7 series, designed using the superjunction principle. This transistor operates at up to 650V and features a maximum on-resistance of 95mΩ and a typical gate charge of 45nC.
Key electrical parameters include a pulse drain current of 100A and typical output capacitance energy (Eoss) of 5.5µJ at 400V. The body diode exhibits a di/dt rating of 60A/µs. These characteristics make it suitable for applications requiring high efficiency and fast switching.
Packaged in a PG-TO 247 through-hole format, the IPW65R095C7 is designed for industrial-grade applications. It is RoHS3 compliant, REACH unaffected, and features Pb-free plating and halogen-free mold compound.
Applications include PFC stages and hard-switching PWM stages for computing, server, telecom, UPS, and solar power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) at Tj,max is 700V.
The maximum on-resistance (RDS(on),max) is 95 mΩ.
The typical gate charge (Qg.typ) is 45 nC.
The package type is PG-TO 247.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.