| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,453 pcs
|
1453 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
602 pcs
|
602 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The Infineon IPW65R065C7 is a high-performance N-Channel MOSFET designed for power applications. It offers a robust 650V drain-source breakdown voltage and a continuous drain current capability of 33A.
Key electrical characteristics include a low drain-source on-resistance (Rds(on)) of 58mOhm, a gate-source threshold voltage of 3.5V, and a gate charge of 64nC. The device operates within a temperature range of -55°C to +150°C.
This MOSFET is packaged in a standard PG-TO 247 case with a through-hole mounting style, making it suitable for various power electronics designs. The CoolMOS C7 series tradename indicates its advanced technology for efficient power conversion.
With a power dissipation rating of 171W and fast switching times including a 7ns fall time and 14ns rise time, the IPW65R065C7 is well-suited for demanding applications requiring reliable performance and thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 33 A.
The drain-source breakdown voltage is 650 V.
The Rds(on) is 58 mOhms.
The operating temperature range is -55 C to +150 C.
It is in a PG-TO 247 package with through-hole mounting.