IPW65R065C7 The Infineon IPW65R065C7 is an N-Channel MOSFET with a 650V breakdown voltage and 33A continuous drain current. It features a low 58mOhm Rds(on) and is housed in a through-hole PG-TO 247 package.
Mfr Part #:

IPW65R065C7

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPW65R065C7 is an N-Channel MOSFET with a 650V breakdown voltage and 33A continuous drain current. It features a low 58mOhm Rds(on) and is housed in a through-hole PG-TO 247 package.
✓ Total Stock: 2,055 pcs
$ Price Range: $2.40

IPW65R065C7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,453 pcs
1453 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
602 pcs
602 pcs On Request 1 On Request On Request 16+ On Request On Request

IPW65R065C7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Configuration
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Gate Charge
Height
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Number of Channels
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IPW65R065C7 Description

Short technical summary and product information.

The Infineon IPW65R065C7 is a high-performance N-Channel MOSFET designed for power applications. It offers a robust 650V drain-source breakdown voltage and a continuous drain current capability of 33A.

 

Key electrical characteristics include a low drain-source on-resistance (Rds(on)) of 58mOhm, a gate-source threshold voltage of 3.5V, and a gate charge of 64nC. The device operates within a temperature range of -55°C to +150°C.

 

This MOSFET is packaged in a standard PG-TO 247 case with a through-hole mounting style, making it suitable for various power electronics designs. The CoolMOS C7 series tradename indicates its advanced technology for efficient power conversion.

 

With a power dissipation rating of 171W and fast switching times including a 7ns fall time and 14ns rise time, the IPW65R065C7 is well-suited for demanding applications requiring reliable performance and thermal management.

IPW65R065C7 Quick Information

Product Type: MOSFET
Series: XPW65R065
Canonical Name: Infineon IPW65R065C7 N-Channel MOSFET
Subcategory: MOSFETs

IPW65R065C7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW65R065C7 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPW65R065C7 Features

  • 650V drain-source breakdown voltage.
  • 33A continuous drain current.
  • 58mOhm drain-source on-resistance.
  • Through-hole mounting in PG-TO 247.
  • Operates from -55C to +150C.

IPW65R065C7 Applications

  • Suitable for power switching circuits.
  • Used in power supply designs.
  • Ideal for high voltage applications.
  • Efficient for energy conversion.

IPW65R065C7 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the continuous drain current for the IPW65R065C7?

The continuous drain current is 33 A.

What is the drain-source breakdown voltage of the IPW65R065C7 MOSFET?

The drain-source breakdown voltage is 650 V.

What is the Rds(on) for the Infineon IPW65R065C7?

The Rds(on) is 58 mOhms.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55 C to +150 C.

What package type is the IPW65R065C7 MOSFET in?

It is in a PG-TO 247 package with through-hole mounting.

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