| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
379 pcs
|
379 pcs | On Request | 1 | On Request | On Request | 1647+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW65R045C7 is an N-Channel enhancement-mode MOSFET from Infineon Technologies, part of the CoolMOS C7 series. It is designed for high-efficiency power conversion applications.
Key electrical specifications include a maximum drain-source voltage of 650V, a continuous drain current of 46A, and a maximum drain-source on-resistance of 45mOhm at Vgs=10V. The device offers a maximum gate charge of 93nC and input capacitance of 4340pF, enabling fast switching.
The MOSFET is housed in a TO-247-3 through-hole package (supplier package PG-TO247-3-41) with an operating junction temperature range of -55°C to 150°C. Maximum power dissipation is 227W.
The maximum drain-source voltage is 650V.
The maximum drain current is 46A (at Tc).
The maximum drain-source on-resistance is 45mOhm at Vgs=10V and Id=24.9A.
The IPW65R045C7 is available in a TO-247-3 through-hole package (supplier package PG-TO247-3-41).
The operating junction temperature range is -55°C to +150°C.
The part is listed as RoHS3 Compliant (unverified, low confidence).