| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44 pcs
|
44 pcs | On Request | 1 | On Request | On Request | 1550 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel |
The Infineon Technologies IPW65R041CFD is a high-performance N-channel power MOSFET designed for demanding applications. It features a maximum breakdown voltage of 650V and a low Rds On of 41mΩ at 25A, 10V.
This MOSFET is capable of handling continuous currents of up to 75A at 25°C and 47A at 100°C. Key electrical characteristics include a typical gate charge of 120nC and input capacitance of 1500pF.
Packaged in a TO-247-3 configuration, the IPW65R041CFD is suitable for surface mount applications. It operates within a temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum breakdown voltage is 650V.
The typical Rds On is 41mΩ at 25A, 10V.
The continuous current rating at 25°C is 75A.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-247-3 package.