| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 1916+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Technology |
The IPW60R299CP is a high-voltage N-channel power MOSFET from Infineon Technologies, part of the CoolMOS family. It is designed for efficient power conversion applications requiring a drain-source voltage rating of 600V and a typical on-resistance of 299mOhm. The device is housed in a TO-247 package with through-hole mounting, suitable for high-power designs. CoolMOS technology provides low switching losses and high efficiency in hard-switching topologies.
600V maximum.
299mOhm.
TO-247.
It is listed as RoHS3 compliant, but this is unverified.
CoolMOS technology.
N-channel.
Through hole.