| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,970 pcs
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5970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPW60R280C6 is a 600V N-Channel MOSFET from Infineon Technologies. It features a continuous drain current of 13.8A at 25°C case temperature and a maximum drain-source on-resistance of 280mOhm at 6.5A and 10V gate drive.
Electrical characteristics include a gate threshold voltage of 3.5V at 430µA drain current, gate charge of 43nC at 10V, and input capacitance of 950pF at 100V drain-source voltage. Power dissipation is 104W at 25°C case temperature.
The device is mounted via through-hole in a TO-247-3 package (supplier device package PG-TO247-3-41). Operating junction temperature range is -55°C to 150°C. This MOSFET is designed for high-power switching applications in power supplies, motor drives, and inverters.
600V.
13.8A.
280mOhm maximum at 6.5A drain current and 10V gate voltage.
-55°C to 150°C junction temperature.
TO-247-3 (through-hole) with supplier package PG-TO247-3-41.
It is listed as RoHS3 compliant, but this has not been verified.
3.5V maximum at 430µA drain current.