| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
122 pcs
|
122 pcs | On Request | 1 | On Request | On Request | 1343+ | On Request | On Request |
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The IPW60R199CP is an N-Channel MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 600V and a continuous drain current of 16A at case temperature. The device has a maximum on-resistance of 199mOhm at 9.9A and 10V gate drive.
This MOSFET utilizes metal-oxide semiconductor technology. The gate charge is 43nC at 10V, and input capacitance is 1520pF at 100V drain-source. The gate threshold voltage is 3.5V maximum at 660µA drain current.
The device is offered in a through-hole TO-247-3 package with a supplier device package of PG-TO247-3-21. It has a maximum power dissipation of 139W and an operating junction temperature range of -55°C to 150°C.
This MOSFET is suitable for high-voltage switching applications such as power supplies, inverters, and motor drives. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
600V.
Through-hole TO-247-3 (PG-TO247-3-21).
-55°C to 150°C junction temperature.
Yes, it is listed as RoHS3 compliant.
199mOhm maximum at 9.9A and 10V gate drive.
16A at case temperature.
3.5V maximum at 660µA drain current.