Mfr Part #:

IPW60R190P6

Mfr Name: Infineon

The Infineon IPW60R190P6 is a 600V N-channel CoolMOS P6 series power MOSFET. It offers low conduction and switching losses, making it suitable for efficient power applications.

✓ Total Stock: 7,037 pcs

IPW60R190P6 Available from 3 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	5,215 pcs On Request	5215 pcs	On Request	1	On Request	On Request	16+18	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,803 pcs On Request	1803 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Trace Tec ✓ Non-Authorised Inventory information	19 pcs On Request	19 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPW60R190P6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	37nC
Halogen Free	True
Mounting Type	Through Hole
Package / Case	PG-TO 247

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IPW60R190P6 Description

Short technical summary and product information.

The Infineon IPW60R190P6 is a high-voltage N-channel power MOSFET from the CoolMOS P6 series. Designed using the superjunction principle, this transistor offers significant advantages in power conversion efficiency.

Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 190mΩ, and a typical Gate Charge (Qg) of 37nC. It also features a pulsed drain current (Id,pulse) of 57A and low energy in output capacitance (Eoss) of 4.9µJ at 400V.

This MOSFET is designed for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages. Its features include increased dv/dt ruggedness, high commutation ruggedness, and ease of use. The device is Pb-free plated and halogen-free.

The IPW60R190P6 is supplied in a PG-TO 247 package, suitable for through-hole mounting. It is qualified for industrial-grade applications according to JEDEC standards.

IPW60R190P6 Quick Information

Product Type: MOSFET

Series: CoolMOS P6

Canonical Name: Infineon IPW60R190P6 N-channel Power MOSFET

Subcategory: Power MOSFET

IPW60R190P6 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: True

IPW60R190P6 Features

650V Drain-Source Voltage rating.
190mΩ maximum On-Resistance.
37nC typical Gate Charge.
57A pulsed drain current capability.
TO-247 package for through-hole mounting.

IPW60R190P6 Applications

Suitable for PFC stages.
Used in hard-switching PWM stages.
Applicable for resonant switching stages.
Ideal for adapter and lighting applications.
Designed for server and telecom power supplies.

IPW60R190P6 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum Drain-Source Voltage for the IPW60R190P6?

The maximum Drain-Source Voltage (Vds) is 650V.

What is the typical On-Resistance of the IPW60R190P6?

The maximum On-Resistance (Rds(on)) is 190mΩ.

What is the typical Gate Charge for this MOSFET?

The typical Gate Charge (Qg) is 37nC.

What package type is the IPW60R190P6 supplied in?

The IPW60R190P6 is supplied in a PG-TO 247 package.

Is the IPW60R190P6 RoHS compliant?

The RoHS Status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPW60R190P6?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the REACH status for this component?

The REACH Status is REACH Unaffected.