| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,800 pcs
|
4800 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Infineon IPW60R190C6 is a high-performance N-channel Power MOSFET belonging to the CoolMOS C6 technology family. Designed for high voltage applications, it operates with a maximum drain-source voltage of 650V and features a low on-resistance of 0.19 Ohms.
This MOSFET is characterized by its extremely low switching and conduction losses, attributed to its very low figure of merit (FOM) for Rds(on)*Qg and Eoss. It boasts a typical gate charge (Qg) of 63 nC and a pulsed drain current (ID,pulse) of 59A. The energy loss (Eoss) at 400V is 5.2 µJ, and the body diode di/dt is rated at 500 A/µs.
The IPW60R190C6 is suitable for various power management applications, including PFC stages, hard switching PWM stages, and resonant switching PWM stages. It is commonly used in power supplies for PCs, adapters, LCD & PDP TVs, lighting systems, servers, telecom equipment, and UPS.
Packaged in a PG-TO247 case, this component is designed for through-hole mounting. It is JEDEC qualified, Pb-free plated, and Halogen-free, aligning with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) at Tj,max is 650V.
The maximum on-resistance (Rds(on)) is 0.19 Ohms.
The typical gate charge (Qg) is 63 nC.
The IPW60R190C6 is supplied in the PG-TO247 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Yes, the IPW60R190C6 is Halogen Free.