Mfr Part #:

IPW60R180P7

Mfr Name: Infineon

The Infineon IPW60R180P7 is a 600V CoolMOS P7 N-channel power MOSFET. It features a maximum on-resistance of 180mΩ and a typical gate charge of 25nC.

✓ Total Stock: 11,190 pcs

$ Price Range: $1.67

IPW60R180P7 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	5,050 pcs On Request	5050 pcs	On Request	1	On Request	On Request	20+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	3,960 pcs On Request	3960 pcs	On Request	1	On Request	On Request	18+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,180 pcs On Request	2180 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPW60R180P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	25nC
Storage Temperature	-55°C ~ 150°C

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IPW60R180P7 Description

Short technical summary and product information.

The Infineon IPW60R180P7 is a 600V N-channel power MOSFET from the CoolMOS P7 series, utilizing superjunction technology. This 7th generation platform offers a revolutionary approach to high-voltage power MOSFETs, combining fast switching capabilities with excellent ease of use, including low ringing tendency and outstanding body diode robustness.

Key electrical specifications include a maximum Drain-Source voltage of 650V, a maximum on-resistance of 180mΩ, and a typical gate charge of 25nC. The part also features a pulsed drain current of 53A and an energy loss (Eoss) of 2.9 µJ at 400V. The body diode exhibits a diF/dt rating of 900 A/µs.

Designed for high-voltage power applications, the IPW60R180P7 is suitable for hard and soft switching applications such as PFC and LLC stages. Its benefits include reduced switching and conduction losses, simplified thermal management, and increased power density. The MOSFET is housed in a PG-TO 247-3 package, designed for through-hole mounting.

This device is fully qualified according to JEDEC standards for industrial applications, offering excellent ESD robustness greater than 2kV (HBM). Potential applications include PC Silverbox, adapters, LCD & PDP TVs, lighting, servers, telecom, and UPS systems.

IPW60R180P7 Quick Information

Product Type: MOSFET

Series: CoolMOS P7

Canonical Name: IPW60R180P7 600V CoolMOS P7 Power Transistor

Subcategory: Power MOSFETs

IPW60R180P7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPW60R180P7 Estimated Pricing

Qty	Low	High
1+	$1.67	$1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPW60R180P7 Features

600V CoolMOS P7 N-channel power MOSFET
180mΩ maximum on-resistance
25nC typical gate charge
PG-TO 247-3 package
Excellent ESD robustness >2kV (HBM)

IPW60R180P7 Applications

Suitable for PFC and LLC stages
Used in PC Silverbox and adapters
Applicable for LCD/PDP TV power
Designed for server and telecom power
Ideal for UPS systems

IPW60R180P7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum Drain-Source voltage for the IPW60R180P7?

The maximum Drain-Source voltage (VDS) at Tj,max is 650V.

What is the maximum On-Resistance of the IPW60R180P7 MOSFET?

The maximum On-Resistance (RDS(on)) is 180mΩ.

What is the typical Gate Charge for this Infineon MOSFET?

The typical Gate Charge (Qg) is 25nC.

What package type is the IPW60R180P7 supplied in?

The IPW60R180P7 is supplied in a PG-TO 247-3 package.

What is the RoHS status of the IPW60R180P7?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPW60R180P7?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the REACH status for this component?

The REACH status is REACH Unaffected.