| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,790 pcs
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1790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPW60R170CFD7 is a 650V, 170mOhm N-channel Power MOSFET from Infineon's CoolMOS CFD7 technology family. It is designed for high-efficiency power conversion with a focus on soft-switching topologies.
Key electrical characteristics include a typical gate charge of 28nC and best-in-class reverse recovery charge (Qrr). The device features an ultra-fast body diode with improved dv/dt and diF/dt ruggedness (1300 A/µs), enabling reliable hard commutation. It offers excellent ruggedness and the highest reliability for resonant topologies.
The MOSFET is optimized for soft-switching applications such as phase-shift full-bridge (ZVS) and LLC converters. Typical application sectors include server, telecom, and EV charging power supplies. It is housed in a PG-TO247-3 through-hole package.
Product validation confirms qualification for industrial applications according to JEDEC47/20/22 standards, ensuring robustness in demanding environments.
650V (at Tj,max).
PG-TO 247-3 (through-hole).
28 nC typical.
1300 A/µs.
CoolMOS CFD7.
Soft switching topologies, phase-shift full-bridge (ZVS), LLC, server, telecom, EV charging.
Through hole.