IPW60R170CFD7 IPW60R170CFD7 is a 650V, 170mOhm N-channel MOSFET from Infineon's CoolMOS CFD7 series. It features ultra-fast body diode and low gate charge for high efficiency in soft-switching applications.
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IPW60R170CFD7

Available from 1 distributors
Mfr Name: Infineon
Infineon
IPW60R170CFD7 is a 650V, 170mOhm N-channel MOSFET from Infineon's CoolMOS CFD7 series. It features ultra-fast body diode and low gate charge for high efficiency in soft-switching applications.
✓ Total Stock: 1,790 pcs

IPW60R170CFD7 Available from 1 distributor

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IPW60R170CFD7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPW60R170CFD7 Description

Short technical summary and product information.

The IPW60R170CFD7 is a 650V, 170mOhm N-channel Power MOSFET from Infineon's CoolMOS CFD7 technology family. It is designed for high-efficiency power conversion with a focus on soft-switching topologies.

 

Key electrical characteristics include a typical gate charge of 28nC and best-in-class reverse recovery charge (Qrr). The device features an ultra-fast body diode with improved dv/dt and diF/dt ruggedness (1300 A/µs), enabling reliable hard commutation. It offers excellent ruggedness and the highest reliability for resonant topologies.

 

The MOSFET is optimized for soft-switching applications such as phase-shift full-bridge (ZVS) and LLC converters. Typical application sectors include server, telecom, and EV charging power supplies. It is housed in a PG-TO247-3 through-hole package.

 

Product validation confirms qualification for industrial applications according to JEDEC47/20/22 standards, ensuring robustness in demanding environments.

IPW60R170CFD7 Quick Information

Product Type: Power MOSFET
Series: CFD7
Canonical Name: IPW60R170CFD7 - Infineon CoolMOS CFD7 650V, 170mOhm N-Channel MOSFET in PG-TO247-3
Subcategory: Power MOSFETs

IPW60R170CFD7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW60R170CFD7 Features

  • 650V drain-source voltage rating.
  • 170mOhm typical on-resistance.
  • Ultra-fast body diode with 1300A/µs diF/dt.
  • 28nC low gate charge typical.
  • Qualified for industrial applications per JEDEC.

IPW60R170CFD7 Applications

  • Soft-switching topologies like LLC and ZVS.
  • Phase-shift full-bridge converters.
  • Server and telecom power supplies.
  • EV charging infrastructure power stages.

IPW60R170CFD7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPW60R170CFD7?

650V (at Tj,max).

What package is the IPW60R170CFD7 available in?

PG-TO 247-3 (through-hole).

What is the typical gate charge of the IPW60R170CFD7?

28 nC typical.

What is the body diode diF/dt rating?

1300 A/µs.

What technology is used in the IPW60R170CFD7?

CoolMOS CFD7.

What applications is the IPW60R170CFD7 suitable for?

Soft switching topologies, phase-shift full-bridge (ZVS), LLC, server, telecom, EV charging.

What is the mounting type of the IPW60R170CFD7?

Through hole.

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